Local bit lines and methods of selecting the same to access memory elements in cross-point arrays

ABSTRACT

Embodiments relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to implement a memory architecture that includes local bit lines for accessing subsets of memory elements, such as memory elements based on third dimensional memory technology. In at least some embodiments, an integrated circuit includes a cross-point memory array formed above a logic layer. The cross-point memory array includes X-lines and Y-lines, of which at least one Y-line includes groups of Y-line portions. Each of the Y-line portions can be arranged in parallel with other Y-line portions within a group of the Y-line portions. Also included are memory elements disposed between a subset of the X-lines and the group of the Y-line portions. In some embodiments, a decoder is configured to select a Y-line portion from the group of Y-line portions to access a subset of the memory elements.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is related to U.S. patent application Ser. No.11/095,026, filed Mar. 30, 2005, published as U.S. Pub. No. 20060171200,and entitled “Memory Using Mixed Valence Conductive Oxides,” and to U.S.patent application Ser. No. 11/881,500, filed Sep. 11, 2008, publishedas U.S. Pub. No. 20090027977, and entitled “Low Read CurrentArchitecture for Memory,” both of which are incorporated herein byreference for all purposes.

FIELD OF THE INVENTION

Embodiments of the invention relate generally to semiconductors andmemory technology, and more particularly, to systems, integratedcircuits, and methods to implement a memory architecture that includeslocal bit lines for accessing subsets of memory elements, such as memoryelements based on third dimensional memory technology.

BACKGROUND

Scaling the dimensions of memory arrays and cells typically affectsoperational characteristics of memory devices formed using specificmemory technologies. In some memory technologies, a reduction in thesize of array lines (e.g., word lines or bit lines) normally gives riseto reductions in the cross-sectional area of conductive paths, which, inturn, increase the resistivity of the array lines. The increasedresistance of the array lines may produce a reduction of voltage (e.g.,voltage drops) along those lines as a function of, for example, theamount of memory cells conducting current from the array lines. Scaleddimensions of memory arrays provide also for an increased number ofmemory cells per word line and/or bit line. Thus, the increased numberof memory cells will increase the leakage current seen on array lines,further increasing the voltage drops on array lines. Further, thereduced dimensions (e.g., reduced pitch and other circuit features) andincreased number of memory cells may exacerbate the difficulties indesigning and/or laying out peripheral circuitry, such as a decoder orany other memory access-related circuit.

At least some conventional memory architectures, such as those includingdynamic random access memory (“DRAM”) technologies and Flash memorytechnologies, typically include non-ohmic devices as part of metal oxidesemiconductor (“MOS”) transistors or structures. A non-ohmic device is acircuit element that can block current from passing through a respectivememory cell for certain parameters (e.g., during read operations) thatmight affect an unselected memory cell. Examples of non-ohmic devicesinclude diodes and transistors, such as a MOS-based gate. Such gatesoperate to open and close conductive paths between the word lines (orbit lines) and the portions of the memory cells used as storage. Whenone of the conventional memory cells is unselected, its gate is in an“off” mode of operation and conducts negligible to no current. The gatestructures used in conventional memory architectures typically bufferthe conventional memory cells from the affects of possible leakagecurrents. The above-described memory architectures and technologies,while functional for their specific technologies, are not well suited toaddress the scaling of memory array dimensions and cell dimensions forother memory technologies.

It would be desirable to provide improved systems, integrated circuits,and methods that minimize one or more of the drawbacks associated withconventional techniques for facilitating memory operations in animproved memory architecture for resistive memory elements.

BRIEF DESCRIPTION OF THE DRAWINGS

The various embodiments are more fully appreciated in connection withthe following detailed description taken in conjunction with theaccompanying drawings, in which:

FIG. 1 depicts a memory array architecture in accordance with variousembodiments of the invention;

FIG. 2A depicts examples of bit line portions for memory architecturesin accordance with various embodiments of the invention;

FIG. 2B depicts an example of a bit line portion and a quantity ofmemory elements as a function of a non-linearity characteristic of aresistive memory element in accordance with various embodiments of theinvention;

FIG. 3 depicts a diagram illustrating an example of a memory arrayarchitecture for portions of a Y-line in accordance with embodiments ofthe invention;

FIGS. 4A and 4B depict perspective views of a memory array architectureincluding sub-arrays based on bit line portions, according to variousembodiments of the invention;

FIG. 5 depicts a diagram of an array structure, according to at leastsome embodiments of the invention;

FIG. 6 depicts a cross-section view of an example of an integratedcircuit implementing groups of local bit lines, according to oneembodiment of the invention;

FIGS. 7A and 7B are diagrams depicting an array structure and the timingduring a read operation, according to some embodiments;

FIGS. 8A and 8B are diagrams depicting an array structure and the timingduring a program operation, according to some embodiments;

FIGS. 9A and 9B are diagrams depicting an array structure and the timingduring an erase operation, according to some embodiments; and

FIGS. 10A and 10B are diagrams depicting an array structure and thetiming during a page erase operation, according to some embodiments.

Like reference numerals refer to corresponding parts throughout theseveral views of the drawings. Note that most of the reference numeralsinclude one or two left-most digits that generally identify the figurethat first introduces that reference number.

DETAILED DESCRIPTION

Various embodiments or examples of the invention may be implemented innumerous ways, including as a system, a process, an apparatus, or aseries of program instructions on a computer readable medium such as acomputer readable storage medium or a computer network where the programinstructions are sent over optical, electronic, or wirelesscommunication links. In general, operations of disclosed processes maybe performed in an arbitrary order, unless otherwise provided in theclaims.

A detailed description of one or more examples is provided below alongwith accompanying figures. The detailed description is provided inconnection with such examples, but is not limited to any particularexample. The scope is limited only by the claims, and numerousalternatives, modifications, and equivalents are encompassed. Numerousspecific details are set forth in the following description in order toprovide a thorough understanding. These details are provided as examplesand the described techniques may be practiced according to the claimswithout some or all of the accompanying details. For clarity, technicalmaterial that is known in the technical fields related to the exampleshas not been described in detail to avoid unnecessarily obscuring thedescription.

U.S. patent application Ser. No. 11/095,026, filed Mar. 30, 2005,published as U.S. Pub. No. 20060171200, and entitled “Memory Using MixedValence Conductive Oxides,” is hereby incorporated by reference in itsentirety for all purposes and describes non-volatile third dimensionalmemory elements that may be arranged in a two-terminal, cross-pointmemory array. New memory structures are possible with the capability ofthis third dimensional memory array. In at least some embodiments, atwo-terminal memory element or memory cell can be configured to changeconductivity when exposed to an appropriate voltage drop across thetwo-terminals. The memory element can include an electrolytic tunnelbarrier and a mixed valence conductive oxide in some embodiments, aswell as multiple mixed valence conductive oxide structures in otherembodiments. A voltage drop across the electrolytic tunnel barrier cancause an electrical field within the mixed valence conductive oxide thatis strong enough to move oxygen ions out of a mixed valence conductiveoxide, according to some embodiments.

In some embodiments, an electrolytic tunnel barrier and one or moremixed valence conductive oxide structures (e.g., one or more layers of aconductive oxide material) do not need to operate in a siliconsubstrate, and, therefore, can be fabricated above circuitry being usedfor other purposes. That is, the active circuitry portion can befabricated front-end-of-the-line (FEOL) on a substrate (e.g., aSilicon—Si wafer or other semiconductor substrate) and one or morelayers of two-terminal cross-point memory arrays that include thenon-volatile memory elements can be fabricated back-end-of-the-line(BEOL) directly on top of the substrate and electrically coupled withthe active circuitry in the FEOL layer using an inter-level interconnectstructure also fabricated FEOL. Further, a two-terminal memory elementcan be arranged as a cross-point such that one terminal is electricallycoupled with an X-direction line (or an “X-line”) and the other terminalis electrically coupled with a Y-direction line (or a “Y-line”). A thirddimensional memory can include multiple memory elements verticallystacked upon one another, sometimes sharing X-direction and Y-directionlines in a layer of memory, and sometimes having isolated lines. When afirst write voltage, VW1, is applied across the memory element (e.g., byapplying ½ VW1 to the X-direction line and ½-VW1 to the Y-directionline), the memory element can switch to a low resistive state. When asecond write voltage, VW2, is applied across the memory element (e.g.,by applying ½ VW2 to the X-direction line and ½-VW2 to the Y-directionline), the memory element can switch to a high resistive state. Memoryelements using electrolytic tunnel barriers and mixed valence conductiveoxides can have VW1 opposite in polarity from VW2.

FIG. 1 depicts an example of one of the memory array architectures inaccordance with various embodiments of the invention. In this example,diagram 100 depicts an array portion 104 that includes an arrangement ofword lines 104 and global bit lines 108. As shown, global bit lines 108include groups 102 of bit line portions, with individual groups 102 a ofbit line portions including a number of bit line portions 130 arrangedin parallel (e.g., electrically in parallel) with each other. Any of bitline portions 130 can be selectable to provide a conductive path to arespective global bit line (“GBL”) 108. In some embodiments, group 102 aof bit line portions, group 102 b of bit line portions, and group 102 cof bit line portions can be configured to couple to points 105 a, 105 b,and 105 c, respectively, of global bit line 108 a. In some embodiments,points 105 a, 105 b, and 105 c can be located at equivalent distancesalong global bit line 108 a based on, for example, the number of memoryelements in individual groups 102 of bit line portions. In someembodiments, word lines 104 are partitioned into groups, such as wordline group 104 a, word line group 104 b, and word line group 104 c, withmemory elements being disposed between a subset of word lines 104 (e.g.,word lines in word line group 104 a) and a group 102 of bit lineportions (e.g., group 102 a). A switching structure 132 is operable toelectrically couple any bit line portion 130 in group 102 a with globalbit line 108 a for accessing a memory element in a memory accessoperation. A selected memory element can be coupled between one of bitline portions 130 and a word line (e.g., such as a word line in wordlines group 104 a). An example of switching structure 132 is a MOStransistor configured to operate as a pass gate. Array portion 104 alsoincludes control lines 110, such as control lines 110 a to 110 c, thatare configured to provide groups 102 of bit line portions with one ormore control signals to select a bit line portion, such as bit lineportion 130.

In view of the foregoing, the structures and/or functionalities of thememory array architecture can facilitate the scaling of dimensions andsize of array portion 104 and its elements to accommodate a greaterquantity of memory elements, according to various embodiments. Invarious embodiments, a memory element (“M”) 107 is a two-terminal memoryelement configured to maintain a state (e.g., a resistive state)representative of a data stored therein. In particular, a two-terminalmemory element 107 can have a programmable resistivity to store alogical state (i.e., two or more logical states) or data value as avalue of resistance. In some examples, memory element 107 can exclude anon-ohmic device that might otherwise regulate current flow when memoryelement 107 is in an unselected state that can provide for a conductivepath in an unselected state. Omission of a non-ohmic device canfacilitate a reduction in the magnitude of voltage levels that are usedto perform read, program, and erase operations, according to someembodiments.

Further, the structures and/or functionalities of the memory arrayarchitecture in accordance with the various embodiments can reducecurrents that otherwise might be generated by unselected memoryelements. As an example, consider that an access signal that otherwisemight be applied to a global bit line 108 to access a memory element isapplied to a group 102 of bit line portions. Therefore, the accesssignal need not be applied to other memory elements (e.g., unselectedmemory elements) via other groups 102 of bit line portions, therebyreducing the quantity of memory elements that might otherwise conductcurrent (e.g., as leakage current). The term “access signal” can referto, at least in some embodiments, a select voltage signal that can be aread voltage or a write voltage.

In some embodiments, memory element 107 is a resistive state memoryelement having a non-linear resistivity as a function of a potentialdifference across its terminals. In an unselected state, memory element107 conducts less current than a memory element that behaves linearly(i.e., a linear memory element that generates a linear current as afunction of voltage) for an equivalent potential difference. Asnon-linear memory element 107 conducts less current than a linear memoryelement, more unselected non-linear memory elements can be implementedin a bit line portion 130 than unselected linear memory elements forequivalent leakage currents. Therefore, a bit line portion 130 caninclude an amount of memory elements 107 determined as a function of anon-linear resistivity for the memory elements.

According to various embodiments, the structures and/or functionalitiesof a memory array architecture, including array portion 104 canfacilitate array efficiency and a reduction in die size. In variousembodiments, word lines groups 104, groups 102 of bit line portions, andthe memory elements can be disposed within one or more layers (e.g., oneor more layers of memory) in array portion 104. In at least someembodiments, one or more layers of memory are formed upon a logic layer,which, in turn, is formed on a semiconductor substrate. In someembodiments, one or more bit line portions in groups 102 of bit lineportions can extend through two or more layers of memory. For example,consider that the word lines groups 104 and global bit lines 108 aredisposed in or parallel to (or substantially parallel to) an X-Y plane174. Therefore, the bit line portions of groups 102 can be disposed in aY-Z plane 172 that is oriented perpendicular (or substantiallyperpendicular to) the substrate (not shown). For example, multipleportions of bit line portions 130 (i.e., the portions that couple to thememory elements) are formed in multiple memory layers in the Z-direction(e.g., along a +Z axis) over a substrate oriented in X-Y plane 174. Themultiple memory layers are vertically stacked over one another and arefabricated BEOL directly over the substrate and tin contact with thesubstrate. Circuitry (e.g., sense amps, muxes, address decoders, readand write voltage sources, and the like) for accessing the multiplememory layers is fabricated FEOL on the substrate (e.g., CMOS circuitryfabricated on a Silicon—Si wafer). In some applications, only a singlelayer of memory can be fabricated BEOL over the substrate.

In some embodiments, switching structure 132 and other similar switchingstructures for other groups 102 of bit line groups can be situated atlayers different than a layer at which memory elements reside. Forexample, switching structure 132 and control lines 110 can be formed ina logic layer located below one or more memory layers that includememory elements 107, thereby conserving area and/or resources thatotherwise might increase die size. In various embodiments, otherperiphery circuitry can reside underneath array portion 104 (and/or anarray composed of array portion 104) to further conserve area and/orresources of array portion 104. For example, a decoder 180 (or portionsthereof) can be disposed partially or substantially (e.g., entirely ornearly entirely) below layers of memory elements. Decoder 180 can beconfigured to decode an address 178 to select a word line in any of wordline groups 104 a, 104 b, and 104 c, and to select a bit line portion inone of groups 102 to perform a memory operation. Other peripheralcircuits, such as sensing circuits 170, can be disposed partially orentirely under the layers of memory composed of array portion 104. Insome embodiments, periphery circuitry, such as switching structure 132,control lines 110, and decoder 180, can be formed in a logic layer on asubstrate using complementary metal-oxide-semiconductor (“CMOS”)fabrication processes, including relatively low voltage CMOSfabrications processes (e.g., to fabricate low voltage CMOS fabricationdevices operable with gate voltages of 1.2 volts or less).

Decoder 180 can include one or more row decoders 192 and/or one or morecolumn decoders 194, according to some embodiments. Decoder 180 isconfigured to receive and decode address 178 to determine which selectedmemory element is selected to apply at least an access signal voltage. Arow decoder 192 is configured to receive a portion of address 178 and todecode the address portion to select one of a number word lines (i.e.,one of a number of rows). For example, row decoder 192 can determine aword line to apply an access signal voltage within one of word linegroups 104 a, 104 b, and 104 c. A column decoder 194 is configured toreceive another portion of address 178 and to decode this other addressportion to select one of a number word lines global bit lines 108 (e.g.,one of a number of columns). In particular, column decoder 194 candetermine a specific group 102 of bit line portions for which to applyan access signal voltage. This, in turn, also can determine which ofword line groups 104 a, 104 b, and 104 c is to be selected. For example,column decoder 194 can select group 102 b of bit line portions toaccess, thereby determining that row decoder 192 is to access a wordline in word line group 104 b. Further, column decoder 194 can generatea control signal applied to one of control lines 110 b for selecting oneof bit line portions in group 102 b. Once a memory element is selected,access voltage generator 190 can generate one or more access signalvoltages to apply via a selected word line and a selected bit lineportion to perform a read operation or a write operation (i.e., a writeoperation to program or erase). Upon accessing the selected memoryelement in, for example, a read operation, the selected memory elementgenerates a read signal (e.g., a read current) representative of aresistive state (i.e., a logical value) and a switching structure 132associated with group 102 b gates the read signal onto global bit line108 a as bit, “b1.” Sensing circuit 170 can include sense amplifiers andrelated circuitry to receive the read signal and to determine thelogical state stored in the memory element.

Access voltage generator 190 is configured to generate select voltagesignals for performing read and write operations for application to wordlines and bit line portions, and, optionally, non-selected voltagesignals, according to some embodiments. For example, an access voltagegenerator 190 can be configured to apply a first access voltage to aselected word line and apply a second access voltage to a group of bitline portions 130 for generating a potential difference across aselected resistive memory element in a group of memory elements. Toprogram a logical value stored in the selected memory element, accessvoltage generator 190 is configured to apply a positive potentialdifference from a selected one of the bit line portions to the selectedword line (i.e., the positive polarity being relative to the bit lineportion). To erase a logical value stored in the selected memoryelement, access voltage generator 190 is configured to apply a negativepotential difference from the selected one of the bit line portions tothe selected word line (i.e., the negative polarity being relative tothe bit line portion). In some embodiments the polarities to program anderase may be reversed. In some embodiments, the magnitude of thepotential difference is 4 volts or less. The first access voltage andthe second access voltage can be the same magnitudes (but differentpolarities) or can be different. For example, the first access voltageand the second access voltage can be approximately +2 volts andapproximately −2 volts, respectively, as applied to the selected wordline and to the selected bit line portion 130 to program the selectedmemory element. As another example, the first access voltage and thesecond access voltage can be voltages of approximately −2 volts andapproximately +2 volts, respectively, as applied to the selected wordline and to the selected bit line portion 130 to erase the selectedmemory element.

As to read, operations, access voltage generator 190 is configured togenerate select voltage signals for accessing a selected memory elementto read out one or more logical values, according to some embodiments.For example, access voltage generator 190 can generate a select voltagesignal sufficient to generate a read current by the selected memorycell. In some embodiments, access voltage generator 190 is configuredalso to generate non-select voltage signals to apply to unselected wordlines and/or bit line portions. Further, access voltage generator 190can generate pre-charge voltage signals for use during memory accessoperations, according to at least some embodiments. Access voltagegenerator 190 also can generate control signal voltages of differentmagnitudes for application to switching structure 132.

Array portion 104 can be formed as part of a cross-point array,according to some embodiments. As one example, the array portion 104 canbe at least one two-terminal cross-point memory array including aplurality of two-terminal memory elements, a plurality of word lines,and a plurality of bit lines. Each memory element (e.g., memory element107) having a first terminal electrically coupled with only one of theplurality of word lines and a second terminal electrically coupled withonly one of the plurality of bit lines. Memory elements 107 in thecross-point array are positioned at an intersection of a word line and abit line portion. Further, a cross-point array can be a single layer ofmemory cells or a stacked cross-point array that includes multiplelayers of memory cells that are vertically stacked upon one another. Forexample, the multiple layers can be vertically stacked along the Z-axis(e.g., the +Z axis). In some embodiments, the term “word line” can beused interchangeably with the term “X-line” and the term “bit line” and“bit line portion” can be used interchangeably with the term “Y-line.”In various other embodiments, array portion 104 can be structured asother than a cross-point array, and/or can include memory elements thatare either three-terminal memory elements or are other thanresistive-state memory elements, or both.

FIG. 2A depicts examples of bit line portions for memory architecturesin accordance with various embodiments of the invention. Diagram 200depicts groups 102 d and 102 a of bit line portions in FIG. 1 usingresistive memory elements, according to some embodiments. As shown,group 102 d of bit line portions includes control gates 208 a asswitching structures and a number of bit line portions 209 a to 209 c,such as bit line portions “Y00,” “Y01,” and “Y0n,” where “Y0” denotesbit line portions associated with global bit line (“GBL0”) 108 b.Similarly, group 102 a of bit line portions includes control gates 208 bas switching structures and a number of bit line portions 209 d to 209f, such as bit line portions “Y10,” “Y11,” and “Y1n,” where “Y1” denotesbit line portions associated with global bit line (“GBL1”) 108 a. Bitline portion 209 f illustrates a grouping 224 of memory elements thatcan include any number of memory elements. A number of control lines 206are coupled to control gates 208 a and 208 b to select which one of bitline portions 209 a to 209 c and bit line portions 209 d to 209 f,respectively, are gated to global bit lines 108 b and 108 a. A number ofword lines (“X0 lines”) 220 are coupled via memory elements to bit lineportions 209 a to 209 f in groups 102 d and 102 a. Note that while thememory elements are depicted as resistive memory elements, the memoryelements need not be limited to resistive memory elements, according toalternate embodiments.

To illustrate operation of groups 102 d and 102 a of bit line portions,consider that memory elements 222 a and 222 b are targeted for accessduring a read operation. During a read operation, consider that a readvoltage—as a select voltage (“Vs”) signal—is applied to word line 221 bto apply the read voltage signal to the terminals 219 a of memoryelements 222 a and 222 b. An activation signal (“Von”) is applied tocontrol line 206 b to activate control gates 240 a and 240 b forcoupling terminals 219 b of memory elements 222 a and 222 b torespective global bit lines 108 b and 108 a. In particular, activationof control gates 240 a and 240 b provides for conductive paths to conveyread currents (or voltages) from memory elements 222 a and 222 b via bitline portions 209 c and 209 f to global bit lines 108 b and 108 a,respectively. A deactivation signal (“Voff”) is applied to control lines206 a to deactivate control gates (other than 240 a and 240 b), therebydecoupling bit line portions 209 a and 209 b from global bit line 108 band decoupling bit line portions 209 d and 209 e from global bit line108 a. Memory elements 222 a and 222 b can be referred to as “selected”memory elements as they are selected for a particular memory operation.In various embodiments, a select voltage (“Vs”) signal can be a voltagesignal of any magnitude and any polarity suitable to generate detectableread currents representative of two or more resistive states for eachbit (e.g., for each bit b0 and bit b1). The two or more resistive statesare associated with stored logical values (e.g., logical values of 0 or1; or logical values of 00, 01, 10, or 11, etc.). An example of a selectvoltage signal is approximately 1.5 volts. In some embodiments, anon-select voltage (“Vns”) signal is applied to word lines 221 a thatare not coupled to memory elements subject to the read operation. Forexample, a non-select voltage (“Vns”) signal can be applied to terminals225 a of respective memory elements 223 a and 223 b, both of which canbe referred to as “unselected” memory elements. An example of anon-select voltage signal includes a voltage signal of approximately 0volts during the read operation.

To illustrate further operation of groups 102 d and 102 a of bit lineportions, consider that memory elements 222 a and 222 b are targeted foraccess during a write operation. During a programming operation,consider that a positive programming voltage (“+Vp”) 133 a—as a selectvoltage (“Vs”) signal—is applied via word line 221 b to the terminals219 a of memory elements 222 a and 222 b, and a negative programmingvoltage (“−Vp”) 133 b—as a select voltage signal—is applied via globalbit lines 108 b and 108 a to the terminals 219 b of respective memoryelements 222 a and 222 b. As such, a positive potential differencebetween global bit lines 108 b or 108 a and word line 221 b (relative toglobal bit lines 108 b or 108 a) is applied across memory elements 222 aand 222 b of sufficient magnitude to configure the resistive states toreflect a programmed state. Therefore, the positive potential differenceprovides for a programming voltage across memory elements, such asselected memory element 222 a and 222 b at the intersection of word line221 b and bit line portions 209 c and 209 f. In some embodiments, aprogram current of approximately one microampere can be sufficient toprogram selected memory element 222 a and 222 b. A magnitude less thanthe positive potential difference (e.g., one-half programming voltage)can be applied as a partial programming voltage across other memoryelements having at least one terminal coupled to bit line portions 209 cand 209 f, such as unselected memory elements 223 a and 223 b. Inparticular, terminals 225 b of unselected memory elements 223 a and 223b receive select voltage signals, whereas the terminals 225 a do notreceive select voltage signals. As unselected memory elements 223 a and223 b receive select voltage signals at terminals 225 b, these memoryelements can also be referred to as “half-selected” memory elements asthey are subject to partial programming (or erasing) voltages. Memoryelements that have none of their terminals coupled to either word line221 b or one of bit line portions 209 c and 209 f can also be referredto as “unselected memory elements” and are not subject to theprogramming voltage or the partial programming voltage. During an eraseoperation, an erase voltage of inverse polarity (relative to the programvoltage) is used. That is, a negative erasing voltage (“−Ve”) 133 a—as aselect voltage (“Vs”) signal—is applied via word line 221 b to theterminals 219 a of memory elements 222 a and 222 b, and a positive erasevoltage (“+Ve”) 133 b—as a select voltage signal—is applied via globalbit lines 108 b and 108 a to the terminals 219 b of respective memoryelements 222 a and 222 b. As such, a negative potential differencebetween global bit lines 108 b or 108 a and word line 221 b (relative toglobal bit lines 108 b or 108 a) is applied across memory elements 222 aand 222 b of sufficient magnitude to configure the resistive states toreflect an erased state. Partial erasing voltages can be applied tounselected memory elements 223 a and 223 b as terminals 225 b arecoupled to bit line portions 209 c and 209 f. Memory elements that donot have a terminal coupled to bit line portions 209 c and 209 f are notsubject to the erasing voltage or the partial erasing voltage.

In various embodiments, values of programming voltages +Vp and −Vp canbe the same or different. In one example, values of programming voltages+Vp and −Vp can be +2 volts and −2 volts, respectively, to generate apositive potential difference of +4 volts across memory element 222 aand 222 b relative to global bit lines 108 b and 108 a. In otherexamples, values of programming voltages +Vp and −Vp can be +2 volts and−1 volt, or +3 volts and 0 volts, respectively, to generate a positivepotential difference of +3 volts across memory element 222 a and 222 brelative to global bit lines 108 b and 108 a. Similarly, values oferasing voltages −Ve and +Vp can be the same or different and can havemagnitudes as described above for programming voltages, with reversepolarities.

A non-select voltage (“Vns”) signal is applied to word lines 221 a thatare not coupled to memory elements subject to a write operation,according to various embodiments. During a programming operation, forexample, a non-select voltage (“Vns”) signal can be applied to terminals225 a of memory elements 223 a and 223 b, both of which can be referredto as “unselected” memory elements during the programming operation. Anexample of a non-select voltage signal is approximately 0 volts. In someembodiments, the non-select voltage signal applied to word lines 221 acan be a non-zero voltage value, such as an amount that is less than(e.g., a fraction of) the select voltage signal magnitude that isapplied to word line 221 b. For example, consider that for a programmingvoltage of +2.0 volts that is applied to word line 221 b as selectvoltage signal 133 a, +Vp, a corresponding non-select voltage signal,Vns, can be applied to word lines 221 a. In some cases, non-selectvoltage signal can be 0.5 volts (or any other suitable value). During anerase operation, for example, the non-select voltage signal applied toword lines 221 a can also be a non-zero value less than the voltagesignal magnitude that is applied to word line 221 b. For instance,consider that for an erasing voltage of −2.0 volts that is applied toword line 221 b as select voltage signal 133 a, −Ve, a correspondingnon-select voltage signal, Vns, can be applied to word lines 221 a. Insome cases, non-select voltage signal can be −0.5 volts (or any othersuitable value). Note that in alternative embodiments, word lines 221 aand 222 b can be disconnected and configured to float if memory elementsassociated with the number of word lines (“X0 lines”) 220 are notselected (or are unselected). For instance, when global bit lines 108 band 108 a are going to receive read current from other memory elementsnot shown in FIG. 2A (i.e., none of word lines 221 a and 221 b areselected), then word lines 221 a and 221 b can be set to zero volts (0V)or can be set to float.

As used herein, a memory element is in a “selected memory element” whenit is selected for access during a memory access operation, and two ormore of its terminals are configured to facilitate either a read orwrite operation. During read operations, a selected memory element has aterminal coupled to a select voltage signal (e.g., a read voltage) andanother terminal coupled to a global bit line. During write operations,a selected memory element has a terminal coupled to receive a firstprogramming (or erase) voltage and has another terminal coupled toreceive a second programming (or erase) voltage. A selected memoryelement can be described as being in a “selected state” during a memoryaccess operation. As used herein, a memory element is in an “unselectedmemory element” when it is not selected for access during a memoryaccess operation, and one or none of its terminals are configured tofacilitate either a read or write operation. In one instance, a singleterminal of an unselected memory element can be configured to facilitateeither a read or write operation. As such, an unselected memory elementduring a read operation has one terminal coupled to a global bit lineand another terminal coupled to an unselected word line. During a writeoperation, one terminal is coupled to receive a programming (or erase)voltage and another terminal is not. In this case, the unselected memoryelement can also be referred to as a “half-selected” memory element. Inanother instance, when none of the terminals are coupled to a global bitline during a read operation or to receive a programming (or erase)voltage, the memory element can also be described as an unselectedmemory element. An unselected memory element can be described as beingin an “unselected state” during a memory access operation.

In various embodiments, control gates 208 a and 208 b can be configuredto operate as pass gates. For example, control gates 208 a and 208 b caninclude MOS-based pass gates. Therefore, control gates 208 a and 208 beach can be implemented as a Y-line gate (e.g., a Y-line MOS pass gate)being coupled between a Y-line (e.g., a global bit line 108) and aY-line portion (e.g., a bit line portion 209). In some embodiments, theterm “bit line portion” can be used interchangeably with the term “localbit line.” In some embodiments, a decoder, such as decoder 180 of FIG.1, can be configured to activate a Y-line gate to couple a local Y-lineportion to a Y-line, and can deactivate other Y-line gates to decoupleother Y-line portions in a group of Y-line portions from the Y-line. Insome embodiments, control gates 208 a and 208 b can be disposed in alogic layer between a layer of memory and a substrate. Further, memoryelements associated with bit line portions 209 a to 209 f can bedisposed in multiple layers of memory.

FIG. 2B depicts an example of a bit line portion and a quantity ofmemory elements as a function of a non-linearity characteristic of aresistive memory element in accordance with various embodiments of theinvention. Diagram 250 depicts a grouping of memory elements 224 coupledbetween bit line portion 209 f and word lines 270 and 272, the quantityof memory elements 260 and 262 in grouping 224 being determined as afunction of the relationship between current and an applied voltage.Diagram 250 also shows a pass gate 252 in a group of control gates 208 bof FIG. 2A that is configured to couple bit line portion 209 f to globalbit line 204 b in this example. During a read operation, a selectvoltage signal (i.e., a read voltage, “Vrd”) is applied to word line 270and non-select voltage signals (e.g., zero voltage) are applied to wordlines 272. In this configuration, memory element 260 is in a selectedstate and memory elements 262 are each in an unselected state. Inresponse to the application of Vrd, selected memory element 260generates a selected current, “I(S),” as an access current (e.g., a readcurrent) from terminal 251 to terminal 253. The selected current, I(S),then flows from terminal 253 onto bit line portion 209 f. By contrast,unselected memory elements 262 generate unselected currents, “I(U),”from terminals 257 to terminals 255. As used herein, the term“unselected current” can refer, at least in some embodiments, to aleakage current produced by an unselected memory element (i.e., ahalf-selected memory element) during, for example, a read operation.

In some embodiments, memory elements 260 and 262 exhibit non-linearoperational characteristics. For example, a memory element can generatenon-linear amounts of current responsive to voltages applied to thememory element. As shown in relationship 290, a selected memory element260 can generate a selected current, I(S), having a current value 294,whereas an unselected memory element 262 can generate an unselectednon-linear current, I(UnI), having a current value 296. Therefore, amemory element in grouping 224 is configured to conduct a current 294when a potential difference, V(sel), is applied across its terminals(e.g., terminals 251 and 253), and conduct a current 296 when anotherpotential difference, V(UnSel), is applied across it terminals (e.g.,terminals 257 and 255). As depicted in relationship 290, the magnitudesof current value 294 and current value 296 are related non-linearly tothe potential difference, V(Sel), and the other potential difference,V(UnSel), respectively. Note further that memory elements 260 and 262—asnon-linear resistive elements—generate less leakage currents than linearresistive elements. A linear resistive memory element (not shown)typically generates a current value (“I(UI)”) 298 for the potentialdifference, V(UnSel). As shown, an unselected linear memory elementgenerates more leakage current than an unselected non-linear memoryelement. Therefore, grouping 224 can include more non-linear memoryelements than linear memory elements for an equivalent amount ofcollective leakage current. In view of the foregoing, an amount ofmemory elements 260 and 262 can be determined as a function of thenon-linear resistivity for each of the memory elements.

In at least one embodiment, the amount of memory elements is determinedso that a read current, Ird, applied to terminal 282 (e.g., an inputterminal to a sensing circuit) generates a target voltage, “Vtarget,”which is sufficient for detecting logical values stored in memoryelement 260. Thus, memory element 260 is configured to transmit theselected current, I(S), via pass gate 252 to establish a voltage, V, onglobal bit line 204 b that is not less than the target voltage,“Vtarget.” The application of the selected current to the global bitline 204 b is offset by the collect leakage currents generated by thenumber of resistive memory elements 262, which operation to draw currentvia pass gate 252 from global bit line 204 b, thereby reducing themagnitude of the voltage, V. As such, the quantity of memory elements ingrouping 224 is based on the number of unselected resistive memoryelements 262 that collectively conduct an amount of the leakage currentthat maintains the voltage, V, at or above the target voltage. Inparticular, the quantity of memory elements in grouping 224 can bedetermined to ensure that current, I(S), offsets the collective leakagecurrents, I(U), so as to maintain the target voltage at terminal 282. Insome embodiments, the target voltage is in a range of 100 mV to 200 mV.In at least one embodiment, the quantity of memory elements in grouping224 is approximately 1,000 for a target voltage at, for example, 200 mV.In some cases, the amount of memory elements can be based on a ratiobetween a current for a selected memory element (e.g., I(S)) and acurrent (e.g., a collective current) for one or more unselected memoryelements. Note that in at least some cases, a read current can be anamount of selected current less (or minus) an amount of aggregateleakage current. In some embodiments, one or more unselected memoryelement 262 can be configured to generate a leakage current of a fewnanoamperes.

FIG. 3 is a diagram depicting one example of an architecture for amemory array for portions of a Y-line in accordance with embodiments ofthe invention. Diagram 300 depicts array portions 301 each including aglobal bit line (“GBL0”) 336 (or a portion thereof), a number of X-lines310 and 312 arranged in one orientation, and a number of Y-line portions320 arranged in another orientation. In particular, global bit line 336and X-lines 310 and 312 lie in planes parallel to an X-Y plane, andY-line portions 320 lie in a plane parallel to a Z-Y plane (i.e.,perpendicular to the X-Y plane). As shown, Y-line portions 320 extendfrom global bit line 336 into two or more layers 308 of memory and arecoupled via control gates 332 to global bit line 336. In the exampleshown, array portions 301 include four layers 308 including from layer(“layer 1”) 308 a to layer (“layer 4”) 308 d, whereby each layer is alayer of memory. One or more control lines 330 are coupled to controlgates 332 to provide activation and deactivation signals.

In the example shown, Y-line portion 320 is associated with at least twosubsets of X-lines. For example, Y-line portion (“Y00”) 320 a isarranged to couple via memory elements 340 to subset of X-lines (“X0”)302 and subset of X-lines (“X1”) 304. Subset of X-lines (“X1”) 304includes X-line (“X10”) 310 a, X-line (“X11”) 310 b, and optional othersnot shown. Subset of X-lines (“X0”) 302 includes X-line (“X00”) 312 a,X-line (“X01”) 312 b, and optional others not shown. Similarly, Y-lineportion (“Y01”) 320 b is arranged to couple via memory elements 340 tosubset of X-lines (“X0”) 302 and subset of X-lines (“X1”) 304. Arepresentation 350 depicts a schematic for subset of X-lines 302 coupledvia resistive memory elements to Y-line portions (“Y00”) 320 a and(“Y01”) 320 b. In some embodiments, one or more of control lines 330,control gates 332, and global bit line 336 are formed below an arrayincluding array portions 301, and, optionally, in a logical layer formedon a substrate.

In some embodiments, a memory element described in this figure or anyfigure herein can be implemented as a resistive memory element 390,which includes a structure 394 implementing an electrolytic insulator(“E1”) and a structure 399 based on a conductive oxide material, such asa conductive metal oxide-based (“CMO-based”) material, for example.Memory element 390 further can include two terminals (not shown). Invarious embodiments, the structure 399 can include one or more layers ofa conductive oxide material, such as one or more layers of a conductivemetal oxide-based (“CMO-based”) material, for example. In variousembodiments, structure 399 can include but is not limited to a materialselected from one or more the following: PrCaMnO_(x) (PCMO), LaNiO_(x)(LNO), SrRuO_(x) (SRO), LaSrCrO_(x) (LSCrO), LaCaMnO_(x) (LCMO),LaSrCaMnO_(x) (LSCMO), LaSrMnO_(x) (LSMO), LaSrCoO_(x) (LSCoO), andLaSrFeO_(x) (LSFeO), where x is nominally 3 for perovskites. In variousembodiments, electrolytic insulator 394 can include but is not limitedto a material for implementing a tunnel barrier layer, the materialbeing selected from one or more of the following: rare earth oxides,rare earth metal oxides, yttria-stabilized zirconium (YSZ), zirconia(ZrO_(x)), yttrium oxide (YO_(x)), erbium oxide (ErO_(x)), gadoliniumoxide (GdO_(x)), lanthanum aluminum oxide (LaAlO_(x)), and hafnium oxide(HfO_(x)), and equivalent materials. Typically, the electrolyticinsulator 904 comprises a thin film layer having a thickness ofapproximately less than 50 Å (e.g., in a range from about 10 Å to about35 Å).

FIGS. 4A and 4B illustrate perspective views of a memory arrayarchitecture including sub-arrays based on bit line portions, accordingto various embodiments of the invention. Diagram 400 of FIG. 4A depictsword line subset (“X0 Subgroup”) 302 and word line subset (“X1Subgroup”) 304 of FIG. 3. Word line subset 302 includes X-line (“X00”)312 a and X-line (“X01”) 312 b formed below X-line (“X10”) 310 a andX-line (“X11”) 310 b of word line subset 304. In particular, word linesubset 302 is formed below word line subset 304 relative to a distancealong the Z-axis with respect to a substrate in an X-Y plane. Further,control lines 330 a are configured to gate even-numbered local bit lines(e.g., Y00, Y02, Y10, and Y12) via gates 332 a onto global bit line 335,whereas control lines 330 b are configured to gate odd-numbered localbit lines (e.g., Y01 and Y11) via gates 332 b onto global bit line 335.As shown, a memory element 430 is disposed at the intersections of aY-line portion and either an X-line 310 or X-line 312. Diagram 450 ofFIG. 4B depicts a larger portion of an array including multipleinstances of sub-array 410 of FIG. 4A. In the examples shown, sub-array410 includes layers of memory stacked in relation to bit line portionsformed perpendicular to the word lines.

FIG. 5 is a diagram depicting an array structure, according to at leastsome embodiments of the invention. In the example shown in diagram 500,FIG. 5 depicts a layout or plan view of array portion 552 includes array554 a and array 554 b. Array 554 a and array 554 b include an X-linesubgroup (“X0”) 503 and an X-line subgroup (“X1”) 505, respectively,each having a number of X-lines that span at least over a number ofY-lines. Further, array 554 a and array 554 b can be formed over localbit line decoders 508 and 510, respectively, to control bit lineportions that constitute a subset of Y-lines, arrays 554 a and 554 bincluding one or more layers of memory. Or, local bit line decoders 508and 510 can be formed within a periphery 504 (or boundary) of any ofarrays 554 a or 554 b, according to some embodiments. In particular,local bit line decoders 508 and 510 can be configured to decode at leasta portion of an address to access one or more memory elements in asubset of memory elements for a Y-line portion, and can be disposedunder the subset of the X-lines. In some embodiments, local bit linedecoders 508 and 510 can be configured to access one or more memoryelements along an X-line substantially simultaneously to perform, forexample, an erase or program operation on a group of memory elements(e.g., a byte erase operation). Or, local bit line decoders 508 and 510can be configured to access a bit line portion from all of the globalbit lines along an X-line substantially simultaneously to perform, forexample, a page erase operation.

Control lines 520 are configured to convey control signals to activateor deactivate local pass gates. Diagram 550 depicts a periphery 553 ofan array block 551 in which array portion 552 is disposed. Thus, localbit line (“BL”) decoders 508 and 510 are disposed under arrays 554 a and554 b as part of array block 551. In one embodiment, an X decoder 552 aand an X decoder 552 b are located beyond the array block footprint orperiphery 553. In one embodiment, X-line subgroup (“X0”) 503 and anX-line subgroup (“X1”) 505 each includes 64 X-lines that span acrossmultiple global bit lines, such as 4 k Y-lines portions (or 4 k localbit lines). Thus, the length of an X-line can include 4 k memoryelements. The length of a bit line portion can include 128 memoryelements per layer, and a length of a global bit line can be 16 k cellwithin 256 groups of bit line portions. In array block 551, there can be16 k X-lines over the subsets of Y-lines.

FIG. 6 depicts a cross-section view of an example of an integratedcircuit implementing groups of local bit lines, according to oneembodiment of the invention. Cross-section view 600 shows multiplememory layers (e.g., BEOL) being vertically disposed above and incontact with a logic layer 602 (e.g., FEOL), which can include logiccircuitry (e.g., CMOS circuitry) for reading data from memory cells aswell as programming and erasing logical values in memory elements. Logiclayer 602 and its logic circuitry can be formed (e.g., fabricated FEOLusing microelectronics fabrication processes) upon a semiconductorsubstrate 601 (e.g., a Silicon—Si wafer or die). The logic circuitry,for example, can include a decoder 650 having control gate circuitry 652to control operation of pass gates formed in logic layer 602, the passgates being operable to couple one of a group of bit line portions to aglobal bit line. Further, the logic circuitry can include an accessvoltage generator 660 to generate various select voltage signals andunselect voltage signals, as well as various activation and deactivationcontrol signal magnitudes (e.g., including pre-charge voltagemagnitudes). Multiple memory layers can include a first layer 604 thatis on contact with the substrate 601, a second layer 606 and an “nth”layer 608 of third dimension memory that are vertically stacked over thefirst layer 604. The multiple memory layers (604-608) can be fabricatedBEOL directly on top of the substrate 601 for the logic layer 602. Thelogic layer 602 can include an inter-layer interconnect structure (notshown) operative to electrically couple the active circuitry (e.g., 650,652, 660) in the logic layer 602 with the one or more layers of BEOLmemory using electrically conductive interconnect structures such asvias, throughs, contacts, plugs, and the like. The multiple layer(s) ofBEOL memory can be fabricated (e.g., grown) directly on top of an uppersurface 602 s of the logic layer 602 or its inter-layer interconnectstructure. In various embodiments, a group 661 of local bit lines can beimplemented anywhere in memory layer 602 to 608. While group of localbit lines 661 can reside in a single layer, the group of local bit lines661 can also extend through multiple layers of memory. Cross-sectionview 600 can depict a portion of a semiconductor substrate (e.g., a Siwafer) or a die that has be singulated (e.g., precision cut or sawn)from the semiconductor substrate or wafer. Subsequently, the die (e.g.,a bottom surface 601 s of substrate 601) can be mounted and electricallycoupled with pins or pads in a suitable IC package (not shown) to form apackaged IC. that can be mounted to a PC board.

In some embodiments, the logic circuitry of logic layer 602 is formedusing CMOS process technologies, including low voltage CMOS processtechnologies. In some embodiments, access voltage generator 660 isconfigured to select a first access voltage to apply to an X-line and asecond access voltage to apply to a Y-line to generate a potentialdifference across a memory element that is less than a breakdown voltageof a Y-line MOS gate. In some embodiments, the potential differencebetween the first access voltage and the second access voltage is lessthan 4 volts. In various embodiments, the dimensions of the memoryelements can scale with dimensions and/or operational characteristics ofCMOS devices formed using CMOS process technologies. For example, logiclayer 602 can include scaled Y-line MOS gates that are coupled between aY-line and a group of Y-line portions (or local bit lines), with thescaled Y-line MOS gates having scaled dimensions of Y-line MOS gates. Inat least some cases, the dimensions of the MOS gates scalecommensurately with dimensions of the memory elements that constitute areduced array size as a cross-point memory array. Further, the scalingof the Y-lines MOS gates to form the scaled Y-line MOS gates facilitatesthe formation of the gates under the cross-point memory array having thereduced array size.

FIGS. 7A and 7B are diagrams illustrating an array structure and thetiming during a read operation, according to some embodiments. Diagram700 depicts an array portion in a read configuration, the array portionincluding control gates 702 a for a subset of X-lines (“X0”) 710 andgroups of bit lines portions, such as a first group (“Y0”) 704 thatincludes bit line portions from (“Y00”) 730 a to (“Y0n”) 732 a and asecond group including bit line portions from (“Y00”) 730 b to (“Y0n”)732 b. Subset of X-lines (“X0”) 710 includes X-line (“X00”) 712 andX-line (“X01”) 714. Further, the array portion includes control gates702 b for a subset of X-lines (“X1”) 720 and groups of bit linesportions, such as a first group (“Y1”) 723 that includes bit lineportions from (“Y10”) 740 a to (“Y1n”) 742 a and a second groupincluding bit line portions from (“Y10”) 740 b to (“Y1n”) 742 b. Subsetof X-lines (“X1”) 720 includes X-line (“X10”) 722 and X-line (“X11”)724. Note that groups 704 and 723 of bit line portions are associatedwith global bit line (“GBL0”) 750, and the other groups of bit lineportions are associated with global bit line (“GBL1”) 752. In theexample shown, memory elements 750 a and 750 b are selected for accessto read values therefrom.

FIG. 7B is a read timing diagram for FIG. 7A, according to someembodiments. Diagram 770 depicts select voltages and unselect voltagesto be applied to certain X-lines and activation and deactivation signalsfor application to local bit line (“LBL”) pass gates. As shown, X-lines722 and 724 are initialized to 0 volts, as well as control gates 702 bassociated with memory elements 750 a and 750 b. At time zero (10″) 780,a select voltage signal 771 of 1.5 volts is applied to X-line (“X10”)722 to apply read voltages to terminals for each memory elements 750 aand 750 b. Unselected word line or X-line 724 remains at 0 volts, asshown by a non-selected voltage signal 772. A deactivation signal 781remains applied (e.g., at 0 volts) to other pass gates that are notcoupled to bit line portions 740 a and 740 b. An activation signal 773of 1.2 volts is applied to control gates 702 b that are coupled to bitline portions 740 a and 740 b, thereby coupling memory elements 750 aand 750 b to global bit line 750 and the global bit line 752,respectively. A voltage 774 is read from each memory element and cantake the shape of waveform 775, if a memory element is erased, or theshape of waveform 776, if the memory element is programmed. Note thatunselected X-lines in subset of X-lines (“X0”) 710 are configured tofloat (e.g., as a non-select voltage signal represents a disconnected orfloating state) as none of X-line (“X00”) 712 and X-line (“X01”) 714 areselected.

FIGS. 8A and 8B are diagrams illustrating an array structure and thetiming during a program operation, according to some embodiments.Diagram 800 depicts an array portion in a program configuration, thearray portion including elements having equivalent function and/orstructure to similarly-named elements in FIGS. 7A and 7B. In thisexample, memory elements 850 a and 850 b are selected memory elementsfor programming. FIG. 8B is a program timing diagram for FIG. 8A,according to some embodiments. Diagram 870 depicts select voltages andunselect voltages to be applied to certain X-lines and activation anddeactivation signals for application to local bit line (“LBL”) passgates. As shown, X-lines 722 and 724 are initialized to 0 volts, globalbit line 750 and global bit line 752 are initialized to 0 volts, andcontrol gates 702 b associated with memory elements 850 a and 850 b areinitialized to have a gate voltage of −1 volt. At time (“t0”) 880, apre-charge signal 872 of 0.5 volts and a pre-charge signal 873 of 0.5volts are applied to X-line 722 and X-line 724. At time (“t1”) 881, anactivation signal 874 of 0 volts is applied to the control gates 702 bcoupled to bit line portions 740 a and 740 b, whereas a deactivationsignal 875 of −1 volt remains applied to pass gates not coupled to bitline portions 740 a and 740 b. At time (“t2”) 882, a select voltagesignal 872 of 2 volts is applied to X-line 722, whereas a non-selectvoltage signal 873 of 0.5 volts remains applied to X-line 724. At time(13″) 883, a non-select signal 876 of 0 volts remains applied to globalbit line 752, and a select voltage signal 877 of −1 volt is applied toglobal bit line 750.

FIGS. 9A and 9B are diagrams illustrating an array structure and thetiming during an erase operation, according to some embodiments. Diagram900 depicts an array portion in an erase configuration, the arrayportion including elements having equivalent function and/or structureto similarly-named elements in FIGS. 7A and 7B. In this example, memoryelements 950 a and 950 b are selected memory elements for erasing (e.g.,such as in a byte erase operation). FIG. 9B is an erase timing diagramfor FIG. 9A, according to some embodiments. Diagram 970 depicts selectvoltages and unselect voltages to be applied to certain X-lines andactivation and deactivation signals for application to local bit line(“LBL”) pass gates. As shown, X-lines 722 and 724 are initialized to 0volts, global bit line 750 and global bit line 752 are initialized to−0.5 volts, and control gates 702 b associated with memory elements 950a and 950 b are initialized to −0.5 volts. At time (10″) 980, apre-charge signal 971 of −0.5 volts and a pre-charge signal 972 of −0.5volts are applied to X-line 722 and X-line 724. At time (“t1”) 981, anactivation signal 973 of 1.2 volts is applied to the control gates 702 bcoupled to bit line portions 740 a and 740 b, whereas a deactivationsignal 974 of −0.5 volts remains applied to pass gates not coupled tobit line portions 740 a and 740 b. At time (“t2”) 982, a select voltagesignal 971 of −2.2 volts is applied to X-line 722, whereas a non-selectvoltage signal 972 of −0.5 volts remains applied to X-line 724. At time(“t3”) 983, a non-select signal 976 of −0.5 volts remains applied toglobal bit line 752, and a select voltage signal 975 of 0.7 volts isapplied to global bit line 750. In some embodiments the byte erasevoltages applied on the X and Y lines may be applied more than once, asshown in FIG. 9B, where 2 byte erase pulses are shown.

FIGS. 10A and 10B are diagrams illustrating an array structure and thetiming during a page erase operation, according to some embodiments.Diagram 1000 depicts an array portion in a page erase configuration, thearray portion including elements having equivalent function and/orstructure to similarly-named elements in FIGS. 7A and 7B. In thisexample, memory elements 1050 a and 1050 b are selected memory elementsfor erasing (e.g., such as in a page erase operation). FIG. 10B is apage erase timing diagram for FIG. 10A, according to some embodiments.Diagram 1070 depicts select voltages and unselect voltages to be appliedto certain X-lines and activation and deactivation signals forapplication to local bit line (“LBL”) pass gates. As shown, X-lines 722and 724 are initialized to 0 volts, global bit line 750 and global bitline 752 are initialized to 0 volts, and control gates 702 b associatedwith memory elements 1050 a and 1050 b are initialized to 0 volts. Attime (10″) 1080, an activation signal 1073 of 1.2 volts is applied tocontrol gates 702 b that are coupled to bit line portions 740 a and 740b, whereas a deactivation signal 1074 of 0 volts remains applied to passgates not coupled to bit line portions 740 a and 740 b. At time (“t1”)1081, a select voltage signal 1071 of −3.0 volts is applied to X-line722, whereas a non-select voltage signal 1072 of 0 volts remains appliedto X-line 724. Select voltage signals 1076 and 1075 of 0 volts remainapplied to global bit line 752 and global bit line 750, respectively, toerase data store in memory elements 1050 a and 1050 b.

The various embodiments of the invention can be implemented in numerousways, including as a system, a process, an apparatus, or a series ofprogram instructions on a computer readable medium such as a computerreadable storage medium or a computer network where the programinstructions are sent over optical or electronic communication links. Ingeneral, the steps of disclosed processes can be performed in anarbitrary order, unless otherwise provided in the claims.

The foregoing description, for purposes of explanation, uses specificnomenclature to provide a thorough understanding of the invention.However, it will be apparent to one skilled in the art that specificdetails are not required in order to practice the invention. In fact,this description should not be read to limit any feature or aspect ofthe present invention to any embodiment; rather features and aspects ofone embodiment can readily be interchanged with other embodiments.Notably, not every benefit described herein need be realized by eachembodiment of the present invention; rather any specific embodiment canprovide one or more of the advantages discussed above. In the claims,elements and/or operations do not imply any particular order ofoperation, unless explicitly stated in the claims. It is intended thatthe following claims and their equivalents define the scope of theinvention.

1. A non-volatile memory device, comprising: a plurality of pass gates;an array including a plurality of vertically stacked memory layers,resistive memory elements, word lines, and subsets including a pluralityof local bit lines, each local bit line comprised of electricallycoupled horizontal and vertical segments, the vertical segmentelectrically coupled with a different one of the plurality of passgates, each memory element having exactly two terminals with oneterminal electrically coupled with only one of the word lines andanother terminal electrically coupled with the horizontal segment ofonly one of the plurality of local bit lines in the subset the memoryelement is positioned in, and the horizontal segment of each local bitline is electrically coupled only with memory elements positioned in asubset of the plurality of vertically stacked memory layers, each memoryelement is electrically in series with its respective word line andlocal bit line, the subsets of local bit lines configured toelectrically couple with global bit lines via the plurality of passgates; and a plurality of local bit line decoders configured to turn ona subset of the pass gates to electrically couple a subset of resistivememory elements with a group of the global bit lines, wherein theplurality of pass gates are disposed in a different plane of asemiconductor die than the subset of resistive memory elements.
 2. Thenon-volatile memory device of claim 1, wherein the pass gates arepositioned under the array.
 3. The non-volatile memory device of claim1, wherein the plurality of the local bit line decoders are positionedunder the array.
 4. The non-volatile memory device of claim 1, whereineach memory element in the subset of resistive memory elements isconfigured to provide an amount of current to a global bit line in thegroup of the global bit lines to offset another amount of current drawnfrom the global bit line into unselected resistive memory elements inthe subset of resistive memory elements.
 5. The non-volatile memorydevice of claim 4, wherein the amount of current less the another amountof current constitutes a read current on the global bit line.
 6. Thenon-volatile memory device of claim 1, wherein at least one of thesubsets of local bit lines comprises a pass gate, a local bit line, aresistive memory element coupled to the local bit line and configured toapply in a selected state an access current representative of aresistive state via the pass gate to establish a voltage on a global bitline that is not less than a target voltage, and other resistive memoryelements coupled to the local bit line and configured to conduct in anunselected state a leakage current from the global bit line, wherein theother resistive memory elements include a number of unselected resistivememory elements that collectively conduct an amount of the leakagecurrent that maintains the voltage.
 7. The non-volatile memory device ofclaim 1 and further comprising: an access voltage generator configuredto apply a first access voltage to a selected word line and a secondaccess voltage to the group of the global bit lines to apply a potentialdifference across selected resistive memory elements in the subset ofresistive memory elements, wherein the potential difference issufficient to write data into the selected resistive memory elements. 8.The non-volatile memory device of claim 7, wherein the potentialdifference is a positive potential difference from one of the global bitlines to the selected word line, the positive potential difference beingconfigured to erase the selected resistive memory elements.
 9. Thenon-volatile memory device of claim 7, wherein the potential differenceis a negative potential difference from one of the global bit lines tothe selected word line, the negative potential difference beingconfigured to program the selected resistive memory elements.
 10. Thenon-volatile memory device of claim 9, wherein the group of the globalbit lines provides an amount of bits associated with a page eraseoperation.
 11. The non-volatile memory device of claim 9, wherein thegroup of the global bit lines provides an amount of bits associated witha byte erase operation.
 12. The non-volatile memory device of claim 7,wherein the access voltage controller is further configured topre-charge the selected word line and unselected word lines prior toapplying the potential difference.
 13. The non-volatile memory device ofclaim 12 and further comprising: control lines disposed under the array,each of the control lines being configured to transmit a pass gatevoltage generated by the access voltage generator to one or more passgates in the subset of the pass gates, wherein the access voltagegenerator is further configured to generate a gate voltage for the oneor more pass gates during an interval after the selected word line andthe unselected word lines are pre-charged and prior to applying thepotential difference.
 14. The non-volatile memory device of claim 1,wherein electrically in series with the two terminals of each memoryelement, each memory element includes only a tunnel barrier layer, and astructure including one or more layers of a conductive oxide material indirect contact with the tunnel barrier layer.
 15. The non-volatilememory device of claim 14, wherein the structure further comprises oneor more materials selected from the group consisting of a perovskite,PrCaMnO_(x), LaNiO_(x), SrRuO_(x), LaSrCrO_(x), LaCaMnO_(x),LaSrCaMnO_(x), LaSrMnO_(x), LaSrCoO_(x), and LaSrFeO_(x).
 16. Thenon-volatile memory device of claim 14, wherein the tunnel barrier layercomprises a material selected from the group consisting of rare earthoxides, rare earth metal oxides, yttria-stabilized zirconium, zirconia,yttrium oxide, erbium oxide, gadolinium oxide, lanthanum aluminum oxide,and hafnium oxide.
 17. The non-volatile memory device of claim 1,wherein each horizontal segment in each memory layer has terminals ofmore than two memory elements electrically coupled with the horizontalsegment.
 18. The non-volatile memory device of claim 1, whereinhorizontal segments is some memory layers are electrically coupled withthe terminals of twice as many memory elements than horizontal segmentsin other memory layers.
 19. The non-volatile memory device of claim 1,wherein each local bit line comprises a plurality of horizontal segmentsthat are electrically coupled with a plurality of vertical segments. 20.The non-volatile memory device of claim 19, wherein some verticalsegments are electrically coupled with fewer horizontal segments thanother vertical segments.
 21. The non-volatile memory device of claim 1,wherein some horizontal segments are electrically coupled with fewerterminals of memory elements than other horizontal segments.
 22. Thenon-volatile memory device of claim 1, wherein each memory elementincludes a non-linear resistivity that is a function of a potentialdifference applied across its two terminals.
 23. The non-volatile memorydevice of claim 1, wherein each memory element includes a non-linearcurrent characteristic that is a function of a potential differenceapplied across its two terminals.